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September 2001
FDC6301N
Dual N-Channel , Digital FET
General Description
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild 's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
Features
25 V, 0.22 A continuous, 0.5 A Peak.
R DS(ON) = 5 ? @ V GS = 2.7 V
R DS(ON) = 4 ? @ V GS = 4.5 V.
This
device has been designed especially for low voltage
Very low level gate drive requirements allowing direct
applications as a replacement for digital transistors. Since bias
resistors are not required, these N-Channel FET's can replace
several digital transistors, with a variety of bias resistors.
operation in 3V circuits. V GS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
SuperSOT -6
SuperSOT -8
SOT-23
TM
TM
SO-8
SOT-223
SOIC-16
Mark: .301
INVERTER APPLICATION
Vcc
4
5
3
2
D
OUT
6
1
IN
G
S
GND
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS , V CC
V GSS , V IN
Parameter
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage, V IN
FDC6301N
25
- 0.5 to +8
Units
V
V
I D , I OUT
Drain/Output Current
- Continuous
0.22
A
- Pulsed
0.5
P D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T J ,T STG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
-55 to 150
6.0
°C
kV
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
140
60
°C/W
°C/W
? 2001 Fairchild Semiconductor Corporation
FDC6301N Rev.D
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相关代理商/技术参数
FDC6301N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 25V 0.22A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 25V, 0.22A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV ;RoHS Compliant: Yes
FDC6301N 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CH MOSFET, 25V, SUPER SOT-6
FDC6301N_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel , Digital FET
FDC6301N_G 制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET N-CH 25V 0.22A 6PIN SUPERSOT - Tape and Reel
FDC6301N_Q 功能描述:MOSFET SSOT-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6302P 功能描述:MOSFET SSOT-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-25V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
FDC6302P 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL P MOSFET -25V -120mA SUPERSOT6